Effect of hydrogen on Pt/GaN Schottky diodes
Author:
Funder
JSPS KAKENHI
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/abc65f/pdf
Reference34 articles.
1. Hydrogen in Crystalline Semiconductors
2. Twenty-five years of field effect gas sensor research in Linköping
3. Gas sensitive field effect devices for high temperature
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1. Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen;ECS Journal of Solid State Science and Technology;2024-04-01
2. Modeling for ammonia gas concentration detection of GaN-based sensors;Modern Physics Letters B;2023-06-09
3. Ambient Sensitive Charge Transfer from GaN to Pt during a Photocatalytic Reaction;The Journal of Physical Chemistry Letters;2022-04-28
4. Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates;Japanese Journal of Applied Physics;2021-06-01
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