Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices-Reference-Cited by-同舟云学术

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Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices

Published:2007-04-24 Issue:4B Volume:46 Page:1984-1988
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Miyagawa Yoshihiro,Murata Tatsunori,Nishida Yukio,Nakai Takehiro,Uedono Akira,Hattori Nobuyoshi,Matsuura Masazumi,Asai Koyu,Yoneda Masahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference7 articles.

1. Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition

2. Nitrogen-bonding environments in glow-discharge—depositeda−Si:Hfilms

3. Connection between Si–N and Si–H vibrational properties in amorphous SiNx: H films

4. Infrared and optical study of a-SiN alloys

5. Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

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1. Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-Enhanced Chemical Vapor Deposition;Electronics;2024-07-15

2. Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films;Journal of Vacuum Science & Technology B;2022-09

3. Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models;Applied Physics Reviews;2019-03

4. Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects;ECS Journal of Solid State Science and Technology;2014-10-14

5. A comparison of the mechanical stability of silicon nitride films deposited with various techniques;Applied Surface Science;2012-11

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