Connection between Si–N and Si–H vibrational properties in amorphous SiNx: H films
Author:
Affiliation:
1. a Department of Electronics, Faculty of Technology , Kanazawa University , Kanazawa , 920 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818908220184
Reference16 articles.
1. Infrared and optical study of a-SiN alloys
2. Electronic structure of hydrogenated and unhydrogenated amorphousSiNx (0≤x≤1.6): A photoemission study
3. Bonding properties of amorphous SiNx:H films with low density of Si-H bonds
4. Amorphous SiNx: H films with a low density of Si–H bonds
5. Amorphous SiN:H dielectrics with low density of defects
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