Characterization of light induced degradation in PECVD silicon nitride passivated Cz silicon wafers using spectroscopic techniques
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry
Reference56 articles.
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5. Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiNx: role of chlorine in plasma enhanced chemical vapour deposition;Mon-Pérez;Nanotechnology,2016
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