Efficient silicon nitride SiN x :H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells-Reference-Cited by-同舟云学术

Efficient silicon nitride SiN x :H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

Published:2019-06-06 Issue:11 Volume:27 Page:1007-1019
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Lelièvre Jean‐François¹^ORCID,Kafle Bishal²,Saint‐Cast Pierre²,Brunet Paul¹,Magnan Romain¹,Hernandez Emmanuel¹,Pouliquen Sylvain³,Massines Françoise¹

Affiliation:

1. PROMES CNRS UPR 8521, Tecnosud, Rambla de la thermodynamique 66100 Perpignan France

2. Fraunhofer Institute for Solar Energy Systems Heidenhofstrasse 2 79110 Freiburg Germany

3. Air LiquideParis‐Saclay Research Center 1 chemin du bas de la porte des Loges 78350 Jouy en Josas France

Funder

Agence de l'Environnement et de la Maîtrise de l'Energie

Bundesministerium für Wirtschaft und Energie

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3141

Reference32 articles.

1. Plasma Si nitride—A promising dielectric to achieve high‐quality silicon MIS/IL solar cells

2. Plasma nitride AR coatings for silicon solar cells

3. Low temperature surface passivation for silicon solar cells

4. Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition

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