Spin-on n-Type Silicon Films Using Phosphorous-doped Polysilanes-Reference-Cited by-同舟云学术

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Spin-on n-Type Silicon Films Using Phosphorous-doped Polysilanes

Published:2007-09-14 Issue:No. 36 Volume:46 Page:L886-L888
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tanaka Hideki,Iwasawa Haruo,Wang Daohai,Toyoda Naoyuki,Aoki Takashi,Yudasaka Ichio,Matsuki Yasuo,Shimoda Tatsuya,Furusawa Masahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. 27.2: Poly-Si Thin-Film Transistors Using Polysilazane-Based Spin-On Glass for All Dielectric Layers

2. Solution-processed silicon films and transistors

3. P-5: Solution-Processed SiO2Films Using Hydrogenated Polysilane Based Liquid Materials

4. Multiple bonding to silicon

5. Analysis of Stress in Laser-Crystallized Polysilicon Thin Films by Raman Scattering Spectroscopy

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1. Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions;IEEE Journal of Photovoltaics;2021-09

2. High Performance Dual Gate Blue Laser Annealed Poly-Si Thin-Film Transistor for High-Resolution Displays;IEEE Transactions on Electron Devices;2021-08

3. Non-thermal liquid-to-solid Si conversion induced by electron beam irradiation;Japanese Journal of Applied Physics;2021-01-21

4. A cyclopentasilane–borane compound as a liquid precursor for p-type semiconducting Si;Journal of Materials Chemistry C;2021

5. Low‐Temperature Polysilicon Oxide Thin‐Film Transistors with Coplanar Structure Using Six Photomask Steps Demonstrating High Inverter Gain of 264 V V −1;Advanced Engineering Materials;2020-02-13

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