P-5: Solution-Processed SiO2Films Using Hydrogenated Polysilane Based Liquid Materials-Reference-Cited by-同舟云学术

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P-5: Solution-Processed SiO2Films Using Hydrogenated Polysilane Based Liquid Materials

Published:2007-05 Issue:1 Volume:38 Page:188-191
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Tanaka Hideki,Aoki Takashi,Yudasaka Ichio,Shimoda Tatsuya,Furusawa Masahiro,Iwasawa Haruo,Wang Daohai,Matsuki Yasuo

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.2785260/fullpdf

Reference5 articles.

1. Solution-processed silicon films and transistors;Shimoda;Nature,2006

2. H. Tanaka Y. Matsuki T. Shimoda H. Iwasawa T. Aoki I. Yudasaka D. Wang M. Miyasaka M. Furusawa 2006

3. Multiple bonding to silicon;Raabe;Chem. Rev.,1985

4. Autoxidation of poly(hydrosilane)s;Chatgilialoglu;Organometallics,1998

5. S.M. Sze nd

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1. Direct Imprinting of Liquid Silicon;ACS Applied Materials & Interfaces;2016-04-06

2. Well-defined silicon patterns by imprinting of liquid silicon;Journal of Materials Chemistry C;2016

3. Formation of epitaxial cobalt disilicide thin film by solution processing;Applied Physics Express;2014-04-28

4. Spectral parameters and Hamaker constants of silicon hydride compounds and organic solvents;Journal of Colloid and Interface Science;2009-12

5. Spin-on n-Type Silicon Films Using Phosphorous-doped Polysilanes;Japanese Journal of Applied Physics;2007-09-14

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