27.2: Poly-Si Thin-Film Transistors Using Polysilazane-Based Spin-On Glass for All Dielectric Layers-Reference-Cited by-同舟云学术

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27.2: Poly-Si Thin-Film Transistors Using Polysilazane-Based Spin-On Glass for All Dielectric Layers

Published:2004 Issue:1 Volume:35 Page:964
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Yudasaka Ichio,Tanaka Hideki,Miyasaka Masami,Inoue Satoshi,Shimoda Tatsuya

Publisher

Wiley

Reference4 articles.

1. T. Shimoda, Digest of Technical Papers of AM-LCD 02, pp. 5–8 (2002).

2. J. Lee, J. Choi, D. Lee, S. Chon, S. Hwang and S. Cho: Int. Symp. on Semi. Manu., pp. 317–320 (2001)

3. J. Heo; S. Hong; D. Ahn; H. Cho; M. Park; K. Fujihara, U. Chung; Y. Oh; J. Moon: Symp. on VLSI Tech. Dig. pp. 132–133 (2002)

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors;ACS Applied Materials & Interfaces;2020-03-09

2. Thin-Film Oxide Transistor by Liquid Process (3): TFTs with ZrInZnO Channel;Nanoliquid Processes for Electronic Devices;2019

3. Thermal and oxidative behavior of a tetraphenylsilane-containing phthalonitrile polymer;High Performance Polymers;2018-11-27

4. Solution-derived SiO2gate insulator formed by CO2laser annealing for polycrystalline silicon thin-film transistors;Japanese Journal of Applied Physics;2017-04-24

5. Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process;physica status solidi (a);2015-06-05

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