Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors-Reference-Cited by-同舟云学术

Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors

Published:2020-03-09 Issue:13 Volume:12 Page:15396-15405
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kang Young Hun¹,Min Bok Ki¹²,Kim Seong K.¹³,Bae Garam¹,Song Wooseok¹^ORCID,Lee Changjin¹,Cho Song Yun¹^ORCID,An Ki-Seok¹^ORCID

Affiliation:

1. Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea

2. Graphene Research Team, ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea

3. Department of Advanced Materials and Chemical Engineering, Hannam University, Daejeon 34430, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c01274

Reference57 articles.

1. Towards Oxide Electronics: a Roadmap

2. Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

3. Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol-Gel Metal-Oxide Dielectrics and Semiconductors

4. Solution-Processable Zirconium Oxide Gate Dielectrics for Flexible Organic Field Effect Transistors Operated at Low Voltages

5. Large-Scale Precise Printing of Ultrathin Sol-Gel Oxide Dielectrics for Directly Patterned Solution-Processed Metal Oxide Transistor Arrays

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