Sol-gel-based metal-oxide thin-film transistors for high-performance flexible NMOS inverters-Reference-Cited by-同舟云学术

Sol-gel-based metal-oxide thin-film transistors for high-performance flexible NMOS inverters

Published:2022-08 Issue: Volume:912 Page:165228
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Park Sang-Joon,Ha Tae-Jun

Funder

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference52 articles.

1. An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates;Hwang;NPG Asia Mater.,2013

2. A review of low-temperature solution-processed metal oxide thin-film transistors for flexible electronics;Park;Adv. Funct. Mater.,2020

3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering;Yabuta;Appl. Phys. Lett.,2006

4. Recent progress in the development of backplane thin film transistors for information displays;Ji;J. Inf. Disp.,2021

5. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor;Park;ACS Appl. Mater. Interfaces,2013

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS₂ Transistor Operating in Subthreshold Regime;ACS Nano;2024-08-15

2. Solution processed zirconium oxide dielectric thin films for electronic applications;Journal of Materials Science: Materials in Electronics;2024-07

3. 35‐1: Invited Paper: High‐quality high‐k ZrO₂‐based dielectric film with low leakage current;SID Symposium Digest of Technical Papers;2024-04

4. Integrated 2T1C pixel circuit with a-Si TFT and NMOS for active matrix mini-LED displays;Semiconductor Science and Technology;2024-02-07

5. High-performance sol–gel processed a-IGZO TFTs with low-melting point metal electrodes;Journal of Materials Chemistry C;2024