Effects of Laser Annealing on the Electrical Characteristics of Dynamic Random Access Memory Using (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3Thin Films-Reference-Cited by-同舟云学术

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Effects of Laser Annealing on the Electrical Characteristics of Dynamic Random Access Memory Using (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3Thin Films

Published:2007-07-04 Issue:7A Volume:46 Page:4197-4199
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Kai-Huang,Chen Ying-Chung,Yang Cheng-Fu,Chen Zhi-Sheng,Chang Ting-Chang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference23 articles.

1. Electrical conductivity of sputtered films of strontium titanate

2. Structural and morphologic evolution of Pt/Ba0.7Sr0.3TiO3/Pt capacitors with annealing processes

3. Structural and optical properties of laser deposited ferroelectric (Sr0.2Ba0.8)TiO3thin films

4. Highly insulative barium zirconate‐titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications

5. Dielectric and Electrical Characteristics of the Barium Strontium Titanate Zirconium Thin Film by RF Sputtering

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1. Hopping conduction distance of bipolar switching GdOx resistance random access memory thin films devices modified by different constant compliance current;Microelectronics Reliability;2018-12

2. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method;Materials;2017-12-12

3. Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices;Ceramics International;2017-08

4. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices;Journal of Electronic Materials;2016-12-01

5. Electrical and Ferroelectric Properties of the Bi3.9La0.1Ti2.9V0.1O12 (BLTV) Thin Films;Integrated Ferroelectrics;2014-11-22

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