Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/10/12/1415/pdf
Reference17 articles.
1. Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices
2. The Effect of Silicon Oxide Based RRAM with Tin Doping
3. Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
4. Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure
5. Nonvolatile transparent manganese oxide thin film resistance random access memory devices
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