Highly insulative barium zirconate‐titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications-Reference-Cited by-同舟云学术

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Highly insulative barium zirconate‐titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications

Published:1996-10-28 Issue:18 Volume:69 Page:2659-2661
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wu T. B.,Wu C. M.,Chen M. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.117550

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