Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=3/a=035502/pdf
Reference20 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Two-step behavior of initial oxidation at HfO2∕Si interface
3. Dipole formation at direct-contact HfO2∕Si interface
4. Surface States and Rectification at a Metal Semi-Conductor Contact
5. Metal-semiconductor contacts: electronic properties
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2. Physical origin investigation of the flatband voltage roll off for metal–oxide–semiconductor device with high-k/metal gate structure;Journal of Semiconductors;2015-09
3. Effect of interfacial Si oxidation on interface dipoles in HfO2/Si structures;Journal of Physics D: Applied Physics;2013-07-09
4. Study of Direct-Contact HfO2/Si Interfaces;Materials;2012-03-19
5. Kelvin probe study on formation of electric dipole at direct-contact HfO2/Si interfaces;Journal of Applied Physics;2011-10
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