Kelvin probe study on formation of electric dipole at direct-contact HfO2/Si interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3646398
Reference53 articles.
1. Nanowire based electronics: Challenges and prospects
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4. 0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrate
5. Electrical performance and reliability improvement by using compositionally varying bi-Layer structure of PVD HfSi/sub x/O/sub y/ dielectric
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