Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga2O3 Schottky Barrier Height Using an Ultrathin HfO2 Interlayer-Reference-Cited by-同舟云学术

Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga₂O₃ Schottky Barrier Height Using an Ultrathin HfO₂ Interlayer

Published:2023-06-06 Issue:6 Volume:5 Page:3198-3205
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Labed Madani¹²³,Min Ji Young¹²³,Jo Eun Seo¹²³,Sengouga Nouredine⁴,Venkata Prasad Chowdam¹²³,Rim You Seung¹²³^ORCID

Affiliation:

1. Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea

2. Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea

3. Institute of Semiconductor and System IC, Sejong University, 206 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea

4. Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra, Biskra 07000, Algeria

Funder

Ministry of Trade, Industry and Energy

Korea Institute for Advancement of Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00259

Reference43 articles.

1. Development of gallium oxide power devices

2. β-Ga2O3 for wide-bandgap electronics and optoelectronics

3. An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

4. Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer

5. On the feasibility of p-type Ga2O3

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