On the feasibility of p-type Ga2O3

Author:

Kyrtsos Alexandros1,Matsubara Masahiko1,Bellotti Enrico12

Affiliation:

1. Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215, USA

2. Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, USA

Funder

DOD | United States Army | RDECOM | Army Research Office

DOD | United States Army | RDECOM | Army Research Laboratory

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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1. Design and simulation of high performance β-Ga2O3 super barrier rectifier with a current blocking layer;Semiconductor Science and Technology;2024-01-18

2. Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction;Applied Physics Letters;2023-12-18

3. Study on the optical spectra for the Li defects and O-Li vacancy pair in gamma-LiAlO2 crystal;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-12

4. A p-type dopable ultrawide-bandgap oxide;Journal of Physics: Condensed Matter;2023-11-16

5. Photosensitive and Rectifying Properties of Ga2O3 Described by Polaronic Screened Electrons and Internal Potentials;The Journal of Physical Chemistry C;2023-11-15

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