Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=5/a=051004/pdf
Reference24 articles.
1. Carrier relaxation dynamics in an ultrafast all-optical modulator using an intersubband transition
2. Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells
3. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells
4. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm
5. Calculation of Near-Infrared Intersubband Absorption Spectra in GaN/AlN Quantum Wells
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2. Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode;Journal of Crystal Growth;2017-04
3. Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation;Applied Physics Letters;2014-09-29
4. Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy;Applied Physics Letters;2011-10-10
5. Fabrication of n-Type GaN Layers by the Pulse Injection Method at 950°C for Intersubband Devices;Electrochemical and Solid-State Letters;2011
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