Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3650929
Reference19 articles.
1. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells
2. All-Optical Switch Utilizing Intersubband Transition in GaN Quantum Wells
3. Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells
4. Molecular beam epitaxy of GaN/AlxGa1−xN superlattices for 1.52–4.2μm intersubband transitions
5. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm
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