Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode
Author:
Funder
JSPS Research Fellow
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Photoelectrochemical properties of InGaN for H2 generation from aqueous water;Fujii;Jpn. J. Appl. Phys.,2005
2. Band bowing and band alignment in InGaN alloys;Moses;Appl. Phys. Lett.,2010
3. Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis;Dahal;Appl. Phys. Lett.,2014
4. Highly stable photoelectrochemical water splitting and hydrogen generation using a double-band InGaN/GaN core/shell nanowire photoanode;Alotaibi;Nano Lett.,2013
5. Highly stable GaN photocatalyst for producing H 2 gas from water;Ohkawa;Jpn. J. Appl. Phys.,2013
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