Low-Coherence Interferometry-Based Non-Contact Temperature Monitoring of a Silicon Wafer and Chamber Parts during Plasma Etching
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=5/a=056201/pdf
Reference19 articles.
1. SiO2Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas
2. Run-to-Run Evolution of Fluorocarbon Radicals in C[sub 4]F[sub 8] Plasmas Interacting with Cold and Hot Inner Walls
3. Diagnostics and control of radicals in an inductively coupled etching reactor
4. Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas
5. Free Radicals in an Inductively Coupled Etching Plasma
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2. Noncontact measurement of substrate temperature by optical low-coherence interferometry in high-power pulsed magnetron sputtering;Japanese Journal of Applied Physics;2017-11-13
3. Real-time temperature monitoring of Si substrate during plasma processing and its heat-flux analysis;Japanese Journal of Applied Physics;2015-11-10
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