Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature-Reference-Cited by-同舟云学术

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Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature

Published:2010-04-20 Issue:4 Volume:49 Page:04DF18
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Futatsuki Takashi,Oe Taro,Aoki Hidemitsu,Komatsu Naoyoshi,Kimura Chiharu,Sugino Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. Morphological and compositional changes in the SiO2∕SiC interface region induced by oxide thermal growth

2. Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC

3. Electronic properties of two-dimensional systems

4. Influence of oxide thickness on the transport properties of silicon metal‐oxide‐semiconductor systems

5. Scattering of silicon inversion layer electrons by metal/oxide interface roughness

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A water-based process for the surface functionalisation of ceramic fibres;Green Chemistry;2020

2. Influence of inserting AlN between AlSiON and 4H–SiC interface for the MIS structure;Applied Surface Science;2011-08

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