Morphological and compositional changes in the SiO2∕SiC interface region induced by oxide thermal growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2167608
Reference26 articles.
1. Advances in SiC power MOSFET technology
2. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
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4. SiC/SiO2 Interface States: Properties and Models
5. Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001̄) face
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