Scattering of silicon inversion layer electrons by metal/oxide interface roughness
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339092
Reference13 articles.
1. Electronic properties of two-dimensional systems
2. Fixed charge density and inversion layer mobility of thin gate oxides
3. Mobility degradation in very thin Oxide p-channel MOSFET's
4. Influence of oxide thickness on the transport properties of silicon metal‐oxide‐semiconductor systems
5. On the effect of acoustic layer modes in an MOS oxide on inversion layer mobility
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