Switching Properties Improvement of Tungsten-Doped Indium Oxide Phototransistor
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ac12b5/pdf
Reference25 articles.
1. Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer
2. Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment andab initiocalculations
3. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
4. Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure
5. Tungsten Doped Indium Oxide Thin Films Deposited at Room Temperature by Radio Frequency Magnetron Sputtering
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