Tungsten Doped Indium Oxide Thin Films Deposited at Room Temperature by Radio Frequency Magnetron Sputtering-Reference-Cited by-同舟云学术

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Tungsten Doped Indium Oxide Thin Films Deposited at Room Temperature by Radio Frequency Magnetron Sputtering

Published:2014-07 Issue:7 Volume:30 Page:644-648
ISSN:1005-0302
Container-title:Journal of Materials Science & Technology
language:en
Short-container-title:Journal of Materials Science & Technology

Author:

Pan Jiaojiao,Wang Wenwen,Wu Dongqi,Fu Qiang,Ma Ding

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Polymers and Plastics,Mechanical Engineering,Mechanics of Materials,Ceramics and Composites

Reference22 articles.

1. A new light trapping TCO for nc-Si:H solar cells

2. Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature

3. Transparent conducting molybdenum-doped zinc oxide films deposited by RF magnetron sputtering

4. Structural and Physical Property Analysis of ZnO–SnO2–In2O3–Ga2O3 Quaternary Transparent Conducting Oxide System

5. Solar spectral optical properties of pigments—Part I: model for deriving scattering and absorption coefficients from transmittance and reflectance measurements

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High mobility tungsten-doped indium oxide (IWO) deposited by room-temperature RF sputtering in pure argon plasma;Materials Science in Semiconductor Processing;2025-01

2. Effect of sputtering pressure on the properties of large area IWO thin films deposited by direct current magnetron sputtering;Current Applied Physics;2024-08

3. Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector;Sensors and Materials;2024-05-15

4. Near-Infrared Transparent Transition-Metal-Doped Indium Oxide Thin-Film Heater for LiDAR;ACS Applied Materials & Interfaces;2023-12-21

5. Optical and electrical properties of niobium-doped indium oxide thin films prepared by co-sputtering technique;Thin Solid Films;2023-12

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