Transient Phenomena in Plasma-Enhanced Chemical Vapor Deposition Processes of Thin-Film Silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference29 articles.
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1. Silicon surface passivation with a-Si:H by PECVD: growth temperature effects on defects and band offset;Japanese Journal of Applied Physics;2023-08-01
2. A review of plasma-induced defects: detection, kinetics and advanced management;Journal of Physics D: Applied Physics;2023-06-08
3. Plasma Synthesis of Silicon Nanoparticles: From Molecules to Clusters and Nanoparticle Growth;IEEE Open Journal of Nanotechnology;2022
4. Hydrogen-induced defects in crystalline silicon during growth of an ultrathin a-Si:H layer;Japanese Journal of Applied Physics;2020-03-05
5. Plasma-Induced Electronic Defects: Generation and Annihilation Kinetics in Hydrogenated Amorphous Silicon;Physical Review Applied;2018-11-02
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