Plasma-Induced Electronic Defects: Generation and Annihilation Kinetics in Hydrogenated Amorphous Silicon
Author:
Funder
JSPS KAKENHI
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.10.054006/fulltext
Reference84 articles.
1. Review on the reliability characterization of plasma-induced damage
2. Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices
3. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides
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