Radical, ion, and photon’s effects on defect generation at SiO2/Si interface during plasma etching-Reference-Cited by-同舟云学术

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Radical, ion, and photon’s effects on defect generation at SiO2/Si interface during plasma etching

Published:2024-11 Issue: Volume:672 Page:160764
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Nunomura Shota^ORCID,Tsutsumi Takayoshi,Takada Noriharu,Fukasawa Masanaga^ORCID,Hori Masaru

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Reference40 articles.

1. RF sputter-etching by fluoro-chloro-hydrocarbon gases;Hosokawa;Japan. J. Appl. Phys.,1974

2. Ion- and electron-assisted gas-surface chemistry - an important effect in plasma etching;Coburn;J. Appl. Phys.,1979

3. Plasma etching: A discussion of mechanisms;Coburn;J. Vac. Sci. Technol.,1979

4. Plasma etching: Yesterday, today, and tomorrow;Donnelly;J. Vac. Sci. Technol. A,2013

5. Microscopic uniformity in plasma etching;Gottscho;J. Vac. Sci. Technol. B,1992

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