Microscopic uniformity in plasma etching-Reference-Cited by-同舟云学术

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Microscopic uniformity in plasma etching

Published:1992-09 Issue:5 Volume:10 Page:2133
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Gottscho Richard A.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 584 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radical, ion, and photon’s effects on defect generation at SiO2/Si interface during plasma etching;Applied Surface Science;2024-11

2. Influence of bias voltage on the Ar/CH₂F₂/O₂ plasma etching of Si₃N₄ films;Japanese Journal of Applied Physics;2024-08-01

3. Morphology of films deposited on the sidewall during the Bosch process using C₄F₈ plasmas;Journal of Micromechanics and Microengineering;2024-07-24

4. Future of plasma etching for microelectronics: Challenges and opportunities;Journal of Vacuum Science & Technology B;2024-06-07

5. High aspect ratio SiO₂/SiN (ON) stacked layer etching using C₃HF₅, C₄H₂F₆, and C₄H₄F₆;Japanese Journal of Applied Physics;2024-06-03

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