Hydrogen-induced defects in crystalline silicon during growth of an ultrathin a-Si:H layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab7478/pdf
Reference65 articles.
1. Hydrogen in crystalline semiconductors
2. Hydrogen passivation of point defects in silicon
3. Hydrogen passivation of vacancy-related centres in silicon
4. Microscopic identification and electronic structure of a di-hydrogen–vacancy complex in silicon by optical detection of magnetic resonance
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1. Passivating antireflection coating of crystalline silicon using i/n a-Si:H/SiN trilayer;Journal of Physics and Chemistry of Solids;2021-09
2. Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage;Japanese Journal of Applied Physics;2021-03-23
3. Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer;Journal of Applied Physics;2020-07-21
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