Microscopic identification and electronic structure of a di-hydrogen–vacancy complex in silicon by optical detection of magnetic resonance
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.64.3042/fulltext
Reference14 articles.
1. Hydrogen in crystalline semiconductors
2. Reactive‐ion‐ and plasma‐etching‐induced extended defects in silicon studied with photoluminescence
3. Gaiself-interstitial-related defect in GaP studied by optically detected magnetic resonance
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