Reactive‐ion‐ and plasma‐etching‐induced extended defects in silicon studied with photoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345784
Reference26 articles.
1. Hydrogen plasma induced defects in silicon
2. Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen
3. Neutralization of acceptors in silicon by atomic hydrogen
4. Effects of deuterium plasmas on silicon near‐surface properties
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