Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model-Reference-Cited by-同舟云学术

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Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

Published:2015-11 Issue:6 Volume:33 Page:061308
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kuboi Nobuyuki,Tatsumi Tetsuya,Kinoshita Takashi,Shigetoshi Takushi,Fukasawa Masanaga,Komachi Jun,Ansai Hisahiro

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4931782

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomistic Simulation of HF Etching Process of Amorphous Si₃N₄ Using Machine Learning Potential;ACS Applied Materials & Interfaces;2024-08-28

2. Influence of bias voltage on the Ar/CH₂F₂/O₂ plasma etching of Si₃N₄ films;Japanese Journal of Applied Physics;2024-08-01

3. Review and perspective of dry etching and deposition process modeling of Si and Si dielectric films for advanced CMOS device applications;Japanese Journal of Applied Physics;2024-08-01

4. High aspect ratio SiO₂/SiN (ON) stacked layer etching using C₃HF₅, C₄H₂F₆, and C₄H₄F₆;Japanese Journal of Applied Physics;2024-06-03

5. Review and future perspective of feature scale profile modeling for high-performance semiconductor devices;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-11-22

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