Enhancement of Crystal Growth in Si Thin-Film Deposition by H-Radical-Assisted Magnetron Sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. Study of the effects of discharge conditions and substrate temperature on Si epitaxial deposition using sputtering-type electron cyclotron resonance plasma
2. Low-temperature silicon homoepitaxial growth by pulsed magnetron sputtering
3. Pronounced crystallization of silicon layers deposited with high deposition rates at temperatures ⩽200 °C
4. Macrocrystalline silicon thin films prepared by RF reactive magnetron sputter deposition
5. Dependence on gas pressure of μc-Si:H prepared by RF magnetron sputtering
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of hydrogen-ion energy on structure of a-Si:H thin films prepared by ion-beam-assisted sputtering;Journal of Materials Science: Materials in Electronics;2015-04-04
2. Argon ion beam assisted magnetron sputtering deposition of boron-doped a-Si:H thin films with improved conductivity;Journal of Non-Crystalline Solids;2013-10
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