Study of the effects of discharge conditions and substrate temperature on Si epitaxial deposition using sputtering-type electron cyclotron resonance plasma-Reference-Cited by-同舟云学术

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Study of the effects of discharge conditions and substrate temperature on Si epitaxial deposition using sputtering-type electron cyclotron resonance plasma

Published:2000-05 Issue:3 Volume:18 Page:873-878
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Gao Junsi,Wang Junli,Sakai Naofumi,Iwanaga Kanako,Muraoka Katsunori,Nakashima Hiroshi,Gao Dawei,Furukawa Katsuhiko

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.582269

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement of Crystal Growth in Si Thin-Film Deposition by H-Radical-Assisted Magnetron Sputtering;Japanese Journal of Applied Physics;2010-01-20

2. Mechanism of Hydrogenated Microcrystalline Si Film Deposition by Magnetron Sputtering Employing a Si Target and H2/Ar Gas Mixture;Japanese Journal of Applied Physics;2009-03-23

3. Application of electron backscatter diffraction to the study of phase transformations;International Materials Reviews;2007-03

4. Electrical properties of low-temperature epitaxial doped Si thin films fabricated by using a sputtering-type electron cyclotron resonance plasma;Journal of Physics D: Applied Physics;2001-03-20

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