Stress in Tin-Doped Indium Oxide Thin Films Formed on Substrates by Sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference15 articles.
1. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows
2. Insitustress measurement of refractory metal silicides during sintering
3. Measurement of Strains at Si‐SiO2 Interface
4. Calculated elastic constants for stress problems associated with semiconductor devices
5. Influence of substrate temperature and film thickness on the structure of reactively evaporated In2O3 films
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1. Ultrahigh Endurance and Extinction Ratio in Programmable Silicon Photonics Based on a Phase Change Material with ITO Heater;Laser & Photonics Reviews;2024-01-08
2. Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress;Science Advances;2022-12-23
3. Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films;Coatings;2021-01-29
4. Study on the ITO work function and hole injection barrier at the interface of ITO/a-Si:H(p) in amorphous/crystalline silicon heterojunction solar cells;Materials Research Bulletin;2012-10
5. Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering;Thin Solid Films;2012-01
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