Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4and SF6-Reference-Cited by-同舟云学术

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4and SF6

Published:2010-11-22 Issue:11 Volume:49 Page:116506
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ostermaier Clemens,Pozzovivo Gianmauro,Basnar Bernhard,Schrenk Werner,Carlin Jean-François,Gonschorek Marcus,Grandjean Nicolas,Vincze Andrej,Tóth Lajos,Pécz Bela,Strasser Gottfried,Pogany Dionyz,Kuzmik Jan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference26 articles.

1. Wet etching of GaN, AlN, and SiC: a review

2. Inductively coupled plasma etching of GaN

3. ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

4. High Etch Rate and Smooth Morphology Using a Novel Chemistry in Reactive Ion Etching of GaN

5. Reactive ion etching of GaN with BCl3/SF6 plasmas

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