Reactive ion etching of GaN with BCl3/SF6 plasmas
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Growth of fcc Fe films on diamond
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
4. Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions
5. Distributed nature of quantum‐well lasers
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