Comprehensive Study of Electron Mobility and Band Gap in Tensile-Strained Bulk Ge-Reference-Cited by-同舟云学术

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Comprehensive Study of Electron Mobility and Band Gap in Tensile-Strained Bulk Ge

Published:2010-04-20 Issue:4 Volume:49 Page:04DC20
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ono Mizuki,Tezuka Tsutomu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

2. Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate

3. Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors

4. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

5. Strained Si, Ge, andSi1−xGexalloys modeled with a first-principles-optimized full-zonek∙pmethod

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Strain on Room-Temperature Spin Transport in Si0.1Ge0.9;Physical Review Applied;2022-08-02

2. Defect engineering strategies for germanium;Journal of Materials Science: Materials in Electronics;2013-01-23

3. Diffusion of tin in germanium: A GGA+U approach;Applied Physics Letters;2011-10-17

4. Ge1−Sn stressors for strained-Ge CMOS;Solid-State Electronics;2011-06

5. (Invited) Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices;ECS Transactions;2010-10-01

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