Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2779845
Reference19 articles.
1. Electron mobility enhancement using ultrathin pure Ge on Si substrate
2. Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors
3. Mechanically Strained Strained-Si NMOSFETs
4. Electron Mobility Model for Strained-Si Devices
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