Effect of Strain on Room-Temperature Spin Transport in Si0.1Ge0.9
Author:
Funder
JSPS
PRESTO
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.18.024005/fulltext
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4. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
5. Hole mobility of strained GaN from first principles
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