A Direct Observation of the Distributions of Local Trapped-Charges and the Interface-States near the Drain Region of the Silicon–Oxide–Nitride–Oxide–Silicon Device for Reliable Four-Bit/Cell Operations-Reference-Cited by-同舟云学术

A Direct Observation of the Distributions of Local Trapped-Charges and the Interface-States near the Drain Region of the Silicon–Oxide–Nitride–Oxide–Silicon Device for Reliable Four-Bit/Cell Operations

Published:2010-11-22 Issue:11 Volume:49 Page:114203
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

An Ho-Myoung,Zhang Yongjie,Kim Hee-Dong,Seo Yu Jeong,Kim Byungcheul,Kim Joo-Yeon,Kim Tae Geun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference18 articles.

1. On the go with SONOS

2. Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

3. Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier

4. Data Retention Reliability Model of NROM Nonvolatile Memory Products

5. A novel channel-program–erase technique with substrate transient hot carrier injection for SONOS NAND flash application

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