Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses-Reference-Cited by-同舟云学术

Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

Published:2009-07 Issue:18 Volume:517 Page:5589-5592
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

An Ho-Myoung,Seo Yu Jeong,Kim Hee Dong,Kim Kyoung Chan,Kim Jong-Guk,Cho Won-Ju,Koh Jung-Hyuk,Sung Yun Mo,Kim Tae Geun

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Electrical characterization of ONO triple dielectric in SONOS nonvolatile memory devices

2. SONOS Device With Tapered Bandgap Nitride Layer

3. Feasibility of re-oxidized nitrided oxide (RONO) as a charge-trapping medium for the non-volatile memory

4. New Erase Characteristics for a Two-Bit SONOS Flash Memory

5. A new low voltage fast SONOS memory with high-k dielectric

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1. Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-01

2. (Invited) Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer;ECS Transactions;2014-03-24

3. Optimization of scandium oxide growth by high pressure sputtering on silicon;Thin Solid Films;2012-12

4. A Direct Observation of the Distributions of Local Trapped-Charges and the Interface-States near the Drain Region of the Silicon–Oxide–Nitride–Oxide–Silicon Device for Reliable Four-Bit/Cell Operations;Japanese Journal of Applied Physics;2010-11-22

5. Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties;Journal of Applied Physics;2010-04-15