(Invited) Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
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Published:2014-03-24
Issue:2
Volume:61
Page:293-300
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Nabatame Toshihide,Ohi Akihiko,Ito Kazuhiro,Takahashi Makoto,Chikyo Toyohiro
Abstract
In this paper we studied characteristics of the Pt/Al2O3/(Ta/Nb)Ox/ Al2O3/SiO2/p-Si capacitors, fabricated by using atomic layer deposition at 200 °C. Note that a large flatband voltage shift (ΔVfb) value of more than 8 V appears after programming at 1 mC/cm2 because large amount of charge is trapped in the Al2O3/(Ta/Nb)Ox/Al2O3 structure. The ΔVfb which occurred after programming decreases with increasing retention time under bias voltage at -5 MV/cm. We found that the electron detrapping occurs easily across the tunneling layer rather than the blocking layer.
Publisher
The Electrochemical Society