New Erase Characteristics for a Two-Bit SONOS Flash Memory-Reference-Cited by-同舟云学术

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New Erase Characteristics for a Two-Bit SONOS Flash Memory

Published:2003-11-15 Issue:5 Volume:43 Page:868-872
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

An Ho-Myoung,Han Tae-Hyeon,Seo Kwang-Yell

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Performance in Charge-Trap-Type Flash Memories with an Al$_2$O$_3$ Dielectric by Using Bandgap Engineering of Charge-Trapping Layers;Journal of the Korean Physical Society;2009-12-15

2. Investigation of Simulated and Measured Program Characteristicsin 4-bit/cell Charge-trap Flash (CTF) Memories;Journal of the Korean Physical Society;2009-07-15

3. Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses;Thin Solid Films;2009-07

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