Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures-Reference-Cited by-同舟云学术

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Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures

Published:2004-06-09 Issue:6A Volume:43 Page:3360-3366
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Martínez-Criado Gema,Miskys Claudio,Karrer Uwe,Ambacher Oliver,Stutzmann Martin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation;Optics Express;2024-08-21

2. Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy;Physical Review B;2024-03-01

3. Low temperature photoluminescence study for identification of intersubband energy levels inside triangular quantum well of AlGaN/GaN heterostructure;Microelectronics Journal;2023-01

4. Two-dimensional confinement of excitons at the interface in nonpolar MgZnO/ZnO heterostructures;Physical Review Materials;2022-03-15

5. Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures;ACS Nano;2017-08-14

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