Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation-Reference-Cited by-同舟云学术

Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation

Published:2024-08-21 Issue:18 Volume:32 Page:32210
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Chen Yu-Ting,Chen Lu-Hsun,Wu Chii-Bin,Chang Sheng Hsiung^ORCID,Yuan Chi-Tsu,Wen Wen-Yu,Chiu Ching-Hsueh¹,Hsu Hertz²,Hsueh Wei Jen²,Lee Yueh-Jian³,Shen Ji-Lin

Affiliation:

1. Chung Yuan Christian University

2. Wafer Works Corporation

3. Lunghwa University of Science and Technology

Abstract

Up-converted photoluminescence excitation (UPLE) spectra of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates have been investigated. Based on the temperature dependence of UPLE, the 3.335-eV excitation peak is attributed to the two-dimensional electron gases (2DEGs) in the AlGaN/GaN heterostructure. A two-step two-photon absorption process through real intermediate quantum-well states is suggested to be responsible for the up-converted luminescence in the AlGaN/GaN HEMTs

Funder

National Science and Technology Council

Publisher

Optica Publishing Group

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