Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures-Reference-Cited by-同舟云学术

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Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures

Published:2017-08-14 Issue:9 Volume:11 Page:8758-8767
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Müßener Jan¹²,Hille Pascal¹²,Grieb Tim¹,Schörmann Jörg²,Teubert Jörg²,Monroy Eva³⁴^ORCID,Rosenauer Andreas¹,Eickhoff Martin¹²

Affiliation:

1. Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany

2. I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

3. Université Grenoble-Alpes, 38000 Grenoble, France

4. CEA-Grenoble, INAC-PHELIQS, 17 Avenue des Martyrs, 38054 Grenoble, France

Funder

Justus Liebig Universit?t Gie?en

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.7b02419

Reference50 articles.

1. Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

2. Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires

3. Carrier confinement in GaN/AlxGa1−xN nanowire heterostructures (0

4. Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires

5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

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3. Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures;Nano Express;2021-07-13

4. High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well;Small;2021-03-10

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