Carrier confinement in GaN/AlxGa1−xN nanowire heterostructures (0<x≤1)-Reference-Cited by-同舟云学术

Carrier confinement in GaN/AlxGa1−xN nanowire heterostructures (0

Published:2011-11-10 Issue:20 Volume:84 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Furtmayr Florian,Teubert Jörg,Becker Pascal,Conesa-Boj Sonia,Morante Joan Ramon,Chernikov Alexey,Schäfer Sören,Chatterjee Sangam,Arbiol Jordi,Eickhoff Martin

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.84.205303/fulltext

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4. Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy

5. Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking

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